PART |
Description |
Maker |
ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
PE6820 |
50 Watts Medium Power WR-42 Waveguide Load 18 GHz to 26.5 GHz
|
Pasternack Enterprises,...
|
PE6818 |
40 Watts Medium Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
UPC2726T00 UPC2726T-E3 UPC2726T |
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON
|
NEC[NEC]
|
SMRP-SM50 |
Wideband, DC-12 GHz
|
Mini-Circuits
|
PH1214-25M |
Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10% Duty 雷达脉冲功率晶体 25瓦特.20-1.40千兆赫,150毫秒脉冲0%的
|
Vishay Intertechnology, Inc. MACOM[Tyco Electronics]
|
TGA4832 |
DC - 35 GHz Wideband Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
BFQ149 |
PNP 5 GHz wideband transistor
|
Philips Semiconductors
|
HMC334LP4 HMC334LP4E |
SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz
|
Hittite Microwave Corporation
|